OPTICAL DAMAGE IN TRANSITION-METAL-DOPED LITAO₃.TSUYA H.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 10; PP. 4323-4333; BIBL. 27 REF.Article

GEOLOGY OF VOLCANO MT. FUJI. (WITH NOTICE).TSUYA H.1968; GEOL. SURV. JAP., MAP, 1:50000; JPN; 1968, P. 1 A 24Miscellaneous

OXYGEN PRECIPITATION FACTORS IN SILICONSHIMURA F; TSUYA H.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 5; PP. 1062-1066; BIBL. 23 REF.Article

THERMALLY INDUCED DEFECT BEHAVIOR AND EFFECTIVE INTRINSIC GETTERING SINK IN SILICON WAFERSSHIMURA F; TSUYA H; KAWAMURA T et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 7; PP. 1579-1583; BIBL. 16 REF.Article

HETEROGENOUS DISTRIBUTION OF INTERSTITIAL OXYGEN IN ANNEALED CZOCHRALSKI-GROWN SILICON CRYSTALSSHIMURA F; OHNISHI Y; TSUYA H et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 11; PP. 867-870; BIBL. 15 REF.Article

SURFACE- AND INNER-MICRODEFECTS IN ANNEALED SILICON WAFER CONTAINING OXYGENSHIMURA F; TSUYA H; KAWAMURA T et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 269-273; BIBL. 17 REF.Article

PRECIPITATION AND REDISTRIBUTION OF OXYGEN IN CZOCHRALSKI-GROWN SILICONSHIMURA F; TSUYA H; KAWAMURA T et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 5; PP. 483-486; BIBL. 12 REF.Article

REDUCTION OF SAUCER PIT MICRODEFECTS IN EPITAXIAL SILICON WAFER BY INTRINSIC GETTERINGTSUYA H; TANNO K; SHIMURA F et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 8; PP. 658-660; BIBL. 11 REF.Article

Microdefects formed in carbon-doped CZ silicon crystals by oxygen precipitation heat treatmentKANAMORI, M; TSUYA, H.Japanese journal of applied physics. 1985, Vol 24, Num 5, pp 557-563, issn 0021-4922Article

Raman scattering in-depth evaluation of recrystallized silicon-on-oxide using different wavelength excitationKANAMORI, M; TSUYA, H.Journal of electronic materials. 1988, Vol 17, Num 1, pp 33-37, issn 0361-5235Article

A STUDY ON INTRINSIE GETTERING IN CZ SILICON CRYSTALS: EVALUATION, THERMAL HISTORY DEPENDENCE, AND ENHANCEMENTTSUYA H; SHIMURA F; OGAWA K et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 2; PP. 374-379; BIBL. 21 REF.Article

Transient behaviour of intrinsic gettering in CZ silicon wafersTSUYA, H; SHIMURA, F.Physica status solidi. A. Applied research. 1983, Vol 79, Num 1, pp 199-206, issn 0031-8965Article

Reduction of grown-in defects by high temperature annealingADACHI, N; HISATOMI, T; SANO, M et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 1, pp 350-353, issn 0013-4651Article

Gettering of Cu and Ni impurities in SIMOX wafersJABLONSKI, J; MIYAMURA, Y; IMAI, M et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 6, pp 2059-2066, issn 0013-4651Article

Local loading effect in selective silicon epitaxyISHITANI, A; ENDO, N; TSUYA, H et al.Japanese journal of applied physics. 1984, Vol 23, Num 6, pp L391-L393, issn 0021-4922, 2Article

Advanced techniques to decrease defect density in molecular beam epitaxial silicon filmsTATSUMI, T; AIZAKI, N; TSUYA, H et al.Japanese journal of applied physics. 1985, Vol 24, Num 4, pp L227-L229, issn 0021-4922Article

Behaviours of thermally induced microdefects in heavily doped silicon wafersTSUYA, H; KONDO, Y; KANAMORI, M et al.Japanese journal of applied physics. 1983, Vol 22, Num 1, pp L16-L18, issn 0021-4922Article

Measurement of the electronic transfer process in nitride film on a silicon substrate via photoconductance decayZHONG, L; TSUYA, H; SHIMURA, F et al.Journal of applied physics. 1993, Vol 74, Num 12, pp 7311-7314, issn 0021-8979Article

Crystalline correlation of epitaxial Si films with underlying spinel films in Si/(MgO Al₂O₃) spinel/Si structureEGAMI, K; MIKAMI, M; TSUYA, H et al.Applied physics letters. 1983, Vol 43, Num 8, pp 757-759, issn 0003-6951Article

Effect of ultraviolet irradiation upon the recombination lifetime of silicon wafers covered with a dielectric filmZHONG, L; ANDO, K; TSUYA, H et al.Applied physics letters. 1993, Vol 63, Num 9, pp 1246-1248, issn 0003-6951Article

Characterization of surface layer in Si/MgO•Al₂O₃/SiO₂/Si by ultra-violet reflection spectrocopyEGAMI, K; MIKAMI, M; KIMURA, M et al.Journal of crystal growth. 1985, Vol 71, Num 1, pp 259-262, issn 0022-0248Article

Epitaxial growth of silicon with Hg-Xe lamp light irradiationISHITANI, A; KANAMORI, M; TSUYA, H et al.Journal of applied physics. 1985, Vol 57, Num 8, pp 2956-2959, issn 0021-8979Article

Novel device isolation technology with selective epitaxial growthENDO, N; TANNO, K; ISHITANI, A et al.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 9, pp 1283-1288, issn 0018-9383Article

Relationship between grown-in defects in Czochralski silicon crystalsUMENO, S; OKUI, M; HOURAI, M et al.Japanese journal of applied physics. 1997, Vol 36, Num 5B, pp L591-L594, issn 0021-4922, 2Article

Characteristics of MOSFET prepared on Si/MgO.Al₂O₃/SiO₂/Si structureHOKARI, Y; MIKAMI, M; EGAMI, K et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 2, pp 253-257, issn 0018-9383Article